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2SC3143-4-TB-E

2SC3143-4-TB-E onsemi

SNYOS07400-1.pdf?t.download=true&u=5oefqw Hersteller: onsemi
Description: TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: 3-CP
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 200 mW
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
833+0.59 EUR
Mindestbestellmenge: 833
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Technische Details 2SC3143-4-TB-E onsemi

Description: TRANSISTOR, Packaging: Bulk, Part Status: Active, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 125°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 3mA, 30mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 5V, Frequency - Transition: 150MHz, Supplier Device Package: 3-CP, Current - Collector (Ic) (Max): 80 mA, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 200 mW.

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2SC3143-4-TB-E Hersteller : ON Semiconductor 2sa12571.pdf Trans RF BJT NPN 160V 0.08A 200mW 3-Pin CP
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