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2SC3325-O(TE85L,F)

2SC3325-O(TE85L,F) Toshiba

07AC10F69053EC0B561A2A2905D4D646ABA96C2428441321F22C97E8C327F4AD.pdf
Hersteller: Toshiba
Bipolar Transistors - BJT S-MINI PLN (LF) TRANSISTOR Pd=200mW F=1MHz
auf Bestellung 8302 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.55 EUR
10+0.33 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.12 EUR
3000+0.095 EUR
6000+0.086 EUR
Mindestbestellmenge: 6
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Technische Details 2SC3325-O(TE85L,F) Toshiba

Description: TRANS NPN 50V 0.5A S-MINI, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: S-Mini, Frequency - Transition: 300MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).

Weitere Produktangebote 2SC3325-O(TE85L,F)

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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2SC3325-O(TE85L,F) 2SC3325-O(TE85L,F) Hersteller : Toshiba Semiconductor and Storage 2SC3325_datasheet_en_20140301.pdf?did=19247&prodName=2SC3325 Description: TRANS NPN 50V 0.5A S-MINI
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: S-Mini
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC3325-O(TE85L,F) 2SC3325-O(TE85L,F) Hersteller : Toshiba Semiconductor and Storage 2SC3325_datasheet_en_20140301.pdf?did=19247&prodName=2SC3325 Description: TRANS NPN 50V 0.5A S-MINI
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: S-Mini
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH