2SC3332S-AA ON Semiconductor
| Anzahl | Preis |
|---|---|
| 1713+ | 0.32 EUR |
| 10000+ | 0.28 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2SC3332S-AA ON Semiconductor
Description: TRANS NPN 160V 0.7A 3-NP, Power - Max: 700 mW, Voltage - Collector Emitter Breakdown (Max): 160 V, Current - Collector (Ic) (Max): 700 mA, Part Status: Obsolete, Supplier Device Package: 3-NP, Frequency - Transition: 120MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Tape & Reel (TR).
Weitere Produktangebote 2SC3332S-AA nach Preis ab 0.23 EUR bis 0.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2SC3332S-AA | Hersteller : ON Semiconductor |
Trans GP BJT NPN 160V 0.7A 700mW 3-Pin NP T/R |
auf Bestellung 128914 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
|
2SC3332S-AA | Hersteller : onsemi |
Description: TRANS NPN 160V 0.7A 3-NPPower - Max: 700 mW Voltage - Collector Emitter Breakdown (Max): 160 V Current - Collector (Ic) (Max): 700 mA Supplier Device Package: 3-NP Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
auf Bestellung 145414 Stücke: Lieferzeit 10-14 Tag (e) |
|


