2SC3332T-AA ON Semiconductor
| Anzahl | Preis |
|---|---|
| 1825+ | 0.3 EUR |
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Technische Details 2SC3332T-AA ON Semiconductor
Description: TRANS NPN 160V 0.7A 3-NP, Power - Max: 700 mW, Voltage - Collector Emitter Breakdown (Max): 160 V, Current - Collector (Ic) (Max): 700 mA, Part Status: Obsolete, Supplier Device Package: 3-NP, Frequency - Transition: 120MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Tape & Box (TB).
Weitere Produktangebote 2SC3332T-AA nach Preis ab 0.38 EUR bis 0.38 EUR
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2SC3332T-AA | Hersteller : onsemi |
 Description: TRANS NPN 160V 0.7A 3-NPPackaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: 3-NP Part Status: Obsolete Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 700 mW |
auf Bestellung 3025 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3332T-AA | Hersteller : ON Semiconductor |
Trans GP BJT NPN 160V 0.7A 700mW 3-Pin NP T/R |
auf Bestellung 1300 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC3332T-AA | Hersteller : ON Semiconductor |
Trans GP BJT NPN 160V 0.7A 700mW 3-Pin NP T/R |
auf Bestellung 1300 Stücke: Lieferzeit 14-21 Tag (e) |