Technische Details 2SC3332T-AA ON Semiconductor
Description: TRANS NPN 160V 0.7A 3-NP, Power - Max: 700 mW, Voltage - Collector Emitter Breakdown (Max): 160 V, Current - Collector (Ic) (Max): 700 mA, Part Status: Obsolete, Supplier Device Package: 3-NP, Frequency - Transition: 120MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Tape & Box (TB).
Weitere Produktangebote 2SC3332T-AA nach Preis ab 0.36 EUR bis 0.45 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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2SC3332T-AA | ON Semiconductor |
 Trans GP BJT NPN 160V 0.7A 700mW 3-Pin NP T/R |
auf Bestellung 3025 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC3332T-AA | onsemi |
Description: TRANS NPN 160V 0.7A 3-NP Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: 3-NP Part Status: Obsolete Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 700 mW |
auf Bestellung 3025 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3332T-AA | ON Semiconductor |
Trans GP BJT NPN 160V 0.7A 700mW 3-Pin NP T/R |
auf Bestellung 1300 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2SC3332T-AA |
|
Hersteller: ON Semiconductor
Trans GP BJT NPN 160V 0.7A 700mW 3-Pin NP T/R
Trans GP BJT NPN 160V 0.7A 700mW 3-Pin NP T/R
auf Bestellung 3025 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1825+ | 0.36 EUR |
| 2SC3332T-AA |
|
Hersteller: onsemi
Description: TRANS NPN 160V 0.7A 3-NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NP
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 700 mW
Description: TRANS NPN 160V 0.7A 3-NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NP
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 700 mW
auf Bestellung 3025 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1212+ | 0.45 EUR |
| 2SC3332T-AA |
|
Hersteller: ON Semiconductor
Trans GP BJT NPN 160V 0.7A 700mW 3-Pin NP T/R
Trans GP BJT NPN 160V 0.7A 700mW 3-Pin NP T/R
auf Bestellung 1300 Stücke:
Lieferzeit 14-21 Tag (e)