2SC3332T-AA onsemi
Hersteller: onsemiDescription: TRANS NPN 160V 0.7A 3NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NP
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 700 mW
auf Bestellung 2847 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1776+ | 0.41 EUR |
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Technische Details 2SC3332T-AA onsemi
Description: TRANS NPN 160V 0.7A 3NP, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V, Frequency - Transition: 120MHz, Supplier Device Package: 3-NP, Part Status: Obsolete, Current - Collector (Ic) (Max): 700 mA, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 700 mW.
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Description: ONSEMI - 2SC3332T-AA - 2SC3332T-AA, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
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2SC3332T-AA | Hersteller : onsemi |
Description: TRANS NPN 160V 0.7A 3NP Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: 3-NP Part Status: Obsolete Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 700 mW |
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