2SC3332T onsemi
Hersteller: onsemi
Description: TRANS NPN 160V 0.7A 3-NP
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: 3-NP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Power - Max: 700 mW
| Anzahl | Preis |
|---|---|
| 1514+ | 0.3 EUR |
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Technische Details 2SC3332T onsemi
Description: TRANS NPN 160V 0.7A 3-NP, Power - Max: 700 mW, Voltage - Collector Emitter Breakdown (Max): 160 V, Current - Collector (Ic) (Max): 700 mA, Part Status: Obsolete, Supplier Device Package: 3-NP, Frequency - Transition: 120MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Bulk.
Weitere Produktangebote 2SC3332T
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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2SC3332T | onsemi |
Description: TRANS NPN 160V 0.7A 3-NP Power - Max: 700 mW Voltage - Collector Emitter Breakdown (Max): 160 V Current - Collector (Ic) (Max): 700 mA Part Status: Obsolete Supplier Device Package: 3-NP Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2SC3332T | onsemi |
Bipolar Transistors - BJT BIP NPN 0.7A 160V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2SC3332T |
|
Hersteller: onsemi
Description: TRANS NPN 160V 0.7A 3-NP
Power - Max: 700 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 700 mA
Part Status: Obsolete
Supplier Device Package: 3-NP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: TRANS NPN 160V 0.7A 3-NP
Power - Max: 700 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 700 mA
Part Status: Obsolete
Supplier Device Package: 3-NP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SC3332T |
|
Hersteller: onsemi
Bipolar Transistors - BJT BIP NPN 0.7A 160V
Bipolar Transistors - BJT BIP NPN 0.7A 160V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH