2SC3495-AA ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - 2SC3495-AA - 2SC3495-AA, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Technische Details 2SC3495-AA ONSEMI
Description: NPN SILICON TRANSISTOR, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN, Vce Saturation (Max) @ Ib, Ic: 500mV @ 200µA, 10mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V, Frequency - Transition: 250MHz, Supplier Device Package: 3-NP, Current - Collector (Ic) (Max): 50 mA, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 500 mW.
Weitere Produktangebote 2SC3495-AA nach Preis ab 0.38 EUR bis 0.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| 2SC3495-AA | onsemi |
Description: NPN SILICON TRANSISTOR Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 500mV @ 200µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V Frequency - Transition: 250MHz Supplier Device Package: 3-NP Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 500 mW |
auf Bestellung 52500 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 2SC3495-AA |
|
Hersteller: onsemi
Description: NPN SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Description: NPN SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
auf Bestellung 52500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1480+ | 0.38 EUR |