2SC3646T-P-TD-E onsemi
Hersteller: onsemi
Description: TRANS NPN 100V 1A PCP
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Description: TRANS NPN 100V 1A PCP
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
auf Bestellung 17000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1211+ | 0.41 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2SC3646T-P-TD-E onsemi
Description: TRANS NPN 100V 1A PCP, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: NPN, Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V, Frequency - Transition: 120MHz, Supplier Device Package: PCP, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 500 mW.
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Verfügbarkeit |
Preis |
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| 2SC3646T-P-TD-E | Hersteller : ONSEMI |
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Bipolar Transistors - BJT BIP NPN 1A 100V |
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2SC3646T-P-TD-E | Hersteller : onsemi |
Description: TRANS NPN 100V 1A PCP Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: PCP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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| 2SC3646T-P-TD-E | Hersteller : ON Semiconductor |
Bipolar Transistors - BJT BIP NPN 1A 100V |
Produkt ist nicht verfügbar |