Technische Details 2SC3857 SANKEN
Description: TRANS NPN 200V 15A MT-200, Voltage - Collector Emitter Breakdown (Max): 200 V, Current - Collector (Ic) (Max): 15 A, Part Status: Obsolete, Supplier Device Package: MT-200, Frequency - Transition: 20MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 4V, Current - Collector Cutoff (Max): 100µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: 3-ESIP, Packaging: Bulk, Power - Max: 150 W.
Weitere Produktangebote 2SC3857
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
2SC3857 | Sanken Electric USA Inc. |
Description: TRANS NPN 200V 15A MT-200Voltage - Collector Emitter Breakdown (Max): 200 V Current - Collector (Ic) (Max): 15 A Part Status: Obsolete Supplier Device Package: MT-200 Frequency - Transition: 20MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 4V Current - Collector Cutoff (Max): 100µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: 3-ESIP Packaging: Bulk Power - Max: 150 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2SC3857 |
![]() |
Hersteller: Sanken Electric USA Inc.
Description: TRANS NPN 200V 15A MT-200
Voltage - Collector Emitter Breakdown (Max): 200 V
Current - Collector (Ic) (Max): 15 A
Part Status: Obsolete
Supplier Device Package: MT-200
Frequency - Transition: 20MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 4V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: 3-ESIP
Packaging: Bulk
Power - Max: 150 W
Description: TRANS NPN 200V 15A MT-200
Voltage - Collector Emitter Breakdown (Max): 200 V
Current - Collector (Ic) (Max): 15 A
Part Status: Obsolete
Supplier Device Package: MT-200
Frequency - Transition: 20MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 4V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: 3-ESIP
Packaging: Bulk
Power - Max: 150 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


