Technische Details 2SC3953E-PM Sanyo
Description: 2SC3953 - NPN EPITAXIAL PLANAR S, Frequency - Transition: 400MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-225AA, TO-126-3, Power - Max: 1.3 W, Voltage - Collector Emitter Breakdown (Max): 120 V, Current - Collector (Ic) (Max): 200 mA, Supplier Device Package: TO-126ML, Part Status: Obsolete, Packaging: Bulk.
Weitere Produktangebote 2SC3953E-PM
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| 2SC3953E-PM | onsemi |
Description: 2SC3953 - NPN EPITAXIAL PLANAR SFrequency - Transition: 400MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Power - Max: 1.3 W Voltage - Collector Emitter Breakdown (Max): 120 V Current - Collector (Ic) (Max): 200 mA Supplier Device Package: TO-126ML Part Status: Obsolete Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2SC3953E-PM |
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Hersteller: onsemi
Description: 2SC3953 - NPN EPITAXIAL PLANAR S
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-126ML
Part Status: Obsolete
Packaging: Bulk
Description: 2SC3953 - NPN EPITAXIAL PLANAR S
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-126ML
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH

