2SC3953E-PM ONSEMI
Hersteller: ONSEMIDescription: ONSEMI - 2SC3953E-PM - 2SC3953E-PM, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 14825 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details 2SC3953E-PM ONSEMI
Description: 2SC3953 - NPN EPITAXIAL PLANAR S, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V, Frequency - Transition: 400MHz, Supplier Device Package: TO-126ML, Part Status: Obsolete, Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 120 V, Power - Max: 1.3 W.
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Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| 2SC3953E-PM | Hersteller : Sanyo |
Description: NPN EPITAXIAL PLANAR SILICON Packaging: Bulk Part Status: Active |
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| 2SC3953E-PM | Hersteller : onsemi |
Description: 2SC3953 - NPN EPITAXIAL PLANAR S Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Frequency - Transition: 400MHz Supplier Device Package: TO-126ML Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 1.3 W |
Produkt ist nicht verfügbar |