2SC3954E ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - 2SC3954E - 2SC3954E, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Technische Details 2SC3954E ONSEMI
Description: NPN SILICON TRANSISTOR, Power - Max: 1.3 W, Voltage - Collector Emitter Breakdown (Max): 120 V, Current - Collector (Ic) (Max): 300 mA, Supplier Device Package: TO-126ML, Frequency - Transition: 400MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-225AA, TO-126-3, Part Status: Active, Packaging: Bulk.
Weitere Produktangebote 2SC3954E nach Preis ab 1.15 EUR bis 1.15 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| 2SC3954E | onsemi |
Description: NPN SILICON TRANSISTOR Power - Max: 1.3 W Voltage - Collector Emitter Breakdown (Max): 120 V Current - Collector (Ic) (Max): 300 mA Supplier Device Package: TO-126ML Frequency - Transition: 400MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Part Status: Active Packaging: Bulk |
auf Bestellung 9400 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 2SC3954E |
|
Hersteller: onsemi
Description: NPN SILICON TRANSISTOR
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 300 mA
Supplier Device Package: TO-126ML
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Part Status: Active
Packaging: Bulk
Description: NPN SILICON TRANSISTOR
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 300 mA
Supplier Device Package: TO-126ML
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Part Status: Active
Packaging: Bulk
auf Bestellung 9400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 503+ | 1.15 EUR |