2SC4081U3HZGT106Q Rohm Semiconductor
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1849+ | 0.078 EUR |
| 2500+ | 0.073 EUR |
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Technische Details 2SC4081U3HZGT106Q Rohm Semiconductor
Description: TRANS NPN 50V 0.15A UMT3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V, Frequency - Transition: 180MHz, Supplier Device Package: UMT3, Part Status: Active, Current - Collector (Ic) (Max): 150 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote 2SC4081U3HZGT106Q nach Preis ab 0.084 EUR bis 0.44 EUR
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2SC4081U3HZGT106Q | Hersteller : Rohm Semiconductor |
Description: TRANS NPN 50V 0.15A UMT3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 180MHz Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC4081U3HZGT106Q | Hersteller : ROHM Semiconductor |
Bipolar Transistors - BJT NPN 50V 0.15A 0.2W SOT-323 |
auf Bestellung 14243 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC4081U3HZGT106Q | Hersteller : Rohm Semiconductor |
Description: TRANS NPN 50V 0.15A UMT3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 180MHz Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3547 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC4081U3HZGT106Q | Hersteller : Rohm Semiconductor |
Trans GP BJT NPN 50V 0.15A 200mW 3-Pin UMT T/R |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC4081U3HZGT106Q | Hersteller : ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 120...270 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
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