2SC4102U3T106R Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: TRANS NPN 120V 0.05A SST3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
Frequency - Transition: 140MHz
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.16 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2SC4102U3T106R Rohm Semiconductor
Description: TRANS NPN 120V 0.05A SST3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V, Supplier Device Package: UMT3, Current - Collector (Ic) (Max): 50 mA, Voltage - Collector Emitter Breakdown (Max): 120 V, Power - Max: 200 mW, Frequency - Transition: 140MHz.
Weitere Produktangebote 2SC4102U3T106R nach Preis ab 0.15 EUR bis 0.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
2SC4102U3T106R | Hersteller : Rohm Semiconductor |
Trans GP BJT NPN 120V 0.05A 200mW 3-Pin UMT T/R |
auf Bestellung 2592 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
2SC4102U3T106R | Hersteller : Rohm Semiconductor |
Description: TRANS NPN 120V 0.05A SST3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V Frequency - Transition: 140MHz Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 200 mW |
auf Bestellung 5361 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
2SC4102U3T106R | Hersteller : ROHM Semiconductor |
Bipolar Transistors - BJT Transistor for high-volt amp |
auf Bestellung 2418 Stücke: Lieferzeit 10-14 Tag (e) |
|