2SC4116-BL,LXHF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SC-70
Frequency - Transition: 80MHz
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Technische Details 2SC4116-BL,LXHF Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC-70, DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Operating Temperature: 125°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR), Power - Max: 100 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 150 mA, Part Status: Active, Supplier Device Package: SC-70, Frequency - Transition: 80MHz.
Weitere Produktangebote 2SC4116-BL,LXHF nach Preis ab 0.081 EUR bis 0.46 EUR
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2SC4116-BL,LXHF | Toshiba |
Bipolar Transistors - BJT AUTO AEC-Q NPN Tr VCEO:50V Ic:0.15A hFE:350-700 SOT-323 (USM) |
auf Bestellung 5821 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC4116-BL,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A SC-70 Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: SC-70 Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Operating Temperature: 125°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
auf Bestellung 5963 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 2SC4116-BL,LXHF |
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Hersteller: Toshiba
Bipolar Transistors - BJT AUTO AEC-Q NPN Tr VCEO:50V Ic:0.15A hFE:350-700 SOT-323 (USM)
Bipolar Transistors - BJT AUTO AEC-Q NPN Tr VCEO:50V Ic:0.15A hFE:350-700 SOT-323 (USM)
auf Bestellung 5821 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 0.45 EUR |
| 11+ | 0.28 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.11 EUR |
| 3000+ | 0.092 EUR |
| 6000+ | 0.081 EUR |
| 2SC4116-BL,LXHF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SC-70
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TRANS NPN 50V 0.15A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SC-70
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 5963 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 39+ | 0.46 EUR |
| 63+ | 0.28 EUR |
| 101+ | 0.17 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.11 EUR |