2SC4117-BL,LF
Produktcode: 208165
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Transistoren > Bipolar-Transistoren NPN
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Weitere Produktangebote 2SC4117-BL,LF nach Preis ab 0.057 EUR bis 0.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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2SC4117-BL,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 120V 0.1A SC-70 Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 120 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SC-70 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Operating Temperature: 125°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC4117-BL,LF | Toshiba |
Bipolar Transistors - BJT Transistor for Low Freq. Amplification |
auf Bestellung 86481 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC4117-BL,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 120V 0.1A SC-70 Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 120 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SC-70 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Operating Temperature: 125°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
auf Bestellung 30617 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC4117-BL,LF | Toshiba |
Trans GP BJT NPN 120V 0.1A 100mW Automotive AEC-Q101 3-Pin USM T/R |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 2SC4117-BL,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.1A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: TRANS NPN 120V 0.1A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.077 EUR |
| 6000+ | 0.069 EUR |
| 9000+ | 0.064 EUR |
| 15000+ | 0.06 EUR |
| 21000+ | 0.057 EUR |
| 2SC4117-BL,LF |
|
Hersteller: Toshiba
Bipolar Transistors - BJT Transistor for Low Freq. Amplification
Bipolar Transistors - BJT Transistor for Low Freq. Amplification
auf Bestellung 86481 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 0.38 EUR |
| 15+ | 0.24 EUR |
| 100+ | 0.14 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.094 EUR |
| 3000+ | 0.075 EUR |
| 6000+ | 0.069 EUR |
| 2SC4117-BL,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.1A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TRANS NPN 120V 0.1A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 30617 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 56+ | 0.38 EUR |
| 90+ | 0.24 EUR |
| 145+ | 0.14 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.093 EUR |
| 2SC4117-BL,LF |
|
Hersteller: Toshiba
Trans GP BJT NPN 120V 0.1A 100mW Automotive AEC-Q101 3-Pin USM T/R
Trans GP BJT NPN 120V 0.1A 100mW Automotive AEC-Q101 3-Pin USM T/R
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Mit diesem Produkt kaufen
| 2SA1163-BL,LF Produktcode: 208164
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Lieblingsprodukt
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