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2SC4213-A(TE85L,F)

2SC4213-A(TE85L,F) Toshiba

2SC4213_datasheet_en_20210625-1090316.pdf
Hersteller: Toshiba
Bipolar Transistors - BJT USM PLN TRANSISTOR Pd=100mW F=1MHz
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5+0.67 EUR
10+0.58 EUR
100+0.49 EUR
500+0.33 EUR
1000+0.25 EUR
3000+0.14 EUR
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Technische Details 2SC4213-A(TE85L,F) Toshiba

Description: TRANS NPN 20V 0.3A SC-70, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 125°C (TJ), Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V, Frequency - Transition: 30MHz, Supplier Device Package: SC-70, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 300 mA, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 100 mW.

Weitere Produktangebote 2SC4213-A(TE85L,F)

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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2SC4213-A(TE85L,F) 2SC4213-A(TE85L,F) Hersteller : Toshiba Semiconductor and Storage 2SC4213_datasheet_en_20210625.pdf?did=19305&prodName=2SC4213 Description: TRANS NPN 20V 0.3A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: SC-70
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC4213-A(TE85L,F) 2SC4213-A(TE85L,F) Hersteller : Toshiba Semiconductor and Storage 2SC4213_datasheet_en_20210625.pdf?did=19305&prodName=2SC4213 Description: TRANS NPN 20V 0.3A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 300 mA
Supplier Device Package: SC-70
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH