2SC4617-S Yangjie Technology



Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-523
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.026 EUR
15000+0.025 EUR
30000+0.023 EUR
60000+0.021 EUR
120000+0.019 EUR
300000+0.018 EUR
Mindestbestellmenge: 3000 Stücke
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Technische Details 2SC4617-S Yangjie Technology

Description: Transistors - Bipolar (BJT) - Si, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 150 mA, Part Status: Active, Supplier Device Package: SOT-523, Frequency - Transition: 180MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V, Current - Collector Cutoff (Max): 500nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SOT-523, Packaging: Tape & Reel (TR).