2SC4672-R Shenzhen Slkormicro Semicon Co., Ltd.
Hersteller: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 50V 500MW 350MV@1A,50MA 2A NPN S
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 210MHz
Supplier Device Package: SOT-89
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: 50V 500MW 350MV@1A,50MA 2A NPN S
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 210MHz
Supplier Device Package: SOT-89
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.10 EUR |
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Technische Details 2SC4672-R Shenzhen Slkormicro Semicon Co., Ltd.
Description: 50V 500MW 350MV@1A,50MA 2A NPN S, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V, Frequency - Transition: 210MHz, Supplier Device Package: SOT-89, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 500 mW.
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|---|---|---|---|---|---|
| 2SC4672-R | Hersteller : N/A | 04+ SOT-89 |
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2SC4672-R | Hersteller : Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 50V 500MW 350MV@1A,50MA 2A NPN S Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V Frequency - Transition: 210MHz Supplier Device Package: SOT-89 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
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