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2SC4935-Y,Q(J

2SC4935-Y,Q(J Toshiba Semiconductor and Storage

2SC4935_2010-12-21.pdf Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 3A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
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Technische Details 2SC4935-Y,Q(J Toshiba Semiconductor and Storage

Description: TRANS NPN 50V 3A TO220NIS, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V, Frequency - Transition: 80MHz, Supplier Device Package: TO-220NIS, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 2 W.

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2SC4935-Y,Q(J Hersteller : Toshiba 2SC4935_2010-12-21.pdf Toshiba
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