2SC5084-O(TE85L,F) Toshiba
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Technische Details 2SC5084-O(TE85L,F) Toshiba
Description: RF TRANS NPN 12V 7GHZ SMINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 125°C (TJ), Gain: 11dB, Power - Max: 150mW, Current - Collector (Ic) (Max): 80mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V, Frequency - Transition: 7GHz, Noise Figure (dB Typ @ f): 1.1dB @ 1GHz, Supplier Device Package: S-Mini, Part Status: Obsolete.
Weitere Produktangebote 2SC5084-O(TE85L,F)
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2SC5084-O(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 12V 7GHZ SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Gain: 11dB Power - Max: 150mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Supplier Device Package: S-Mini Part Status: Obsolete |
Produkt ist nicht verfügbar |
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2SC5084-O(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 12V 7GHZ SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Gain: 11dB Power - Max: 150mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Supplier Device Package: S-Mini Part Status: Obsolete |
Produkt ist nicht verfügbar |