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2SC5095-R(TE85L,F)

2SC5095-R(TE85L,F) Toshiba

2SC5095_datasheet_en_20140301-2887471.pdf
Hersteller: Toshiba
Bipolar Transistors - BJT Radio-Freq Bipolar 15mA 100mW 10V
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Technische Details 2SC5095-R(TE85L,F) Toshiba

Description: RF TRANS NPN 10V 10GHZ SC70, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 125°C (TJ), Gain: 13dB ~ 7.5dB, Power - Max: 100mW, Current - Collector (Ic) (Max): 15mA, Voltage - Collector Emitter Breakdown (Max): 10V, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V, Frequency - Transition: 10GHz, Noise Figure (dB Typ @ f): 1.8dB @ 2GHz, Supplier Device Package: SC-70, Part Status: Obsolete.

Weitere Produktangebote 2SC5095-R(TE85L,F)

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2SC5095-R(TE85L,F) 2SC5095-R(TE85L,F) Toshiba Semiconductor and Storage Description: RF TRANS NPN 10V 10GHZ SC70
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Frequency - Transition: 10GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 15mA
Power - Max: 100mW
Gain: 13dB ~ 7.5dB
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: SC-70
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC5095-R(TE85L,F) 2SC5095-R(TE85L,F) Toshiba Semiconductor and Storage Description: RF TRANS NPN 10V 10GHZ SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 13dB ~ 7.5dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 15mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC5095-R(TE85L,F)
2SC5095-R(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 10V 10GHZ SC70
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Frequency - Transition: 10GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 15mA
Power - Max: 100mW
Gain: 13dB ~ 7.5dB
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: SC-70
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC5095-R(TE85L,F)
2SC5095-R(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 10V 10GHZ SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 13dB ~ 7.5dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 15mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH