2SC5200-O(S1,F Toshiba
auf Bestellung 294 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.62 EUR |
| 10+ | 4.42 EUR |
| 100+ | 3.38 EUR |
| 500+ | 2.9 EUR |
| 1000+ | 2.57 EUR |
| 2500+ | 2.43 EUR |
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Technische Details 2SC5200-O(S1,F Toshiba
Description: TRANS NPN 230V 15A TO-3P, Packaging: Tube, Package / Case: TO-3PL, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A, Current - Collector Cutoff (Max): 5µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V, Frequency - Transition: 30MHz, Supplier Device Package: TO-3P(L), Part Status: Active, Current - Collector (Ic) (Max): 15 A, Voltage - Collector Emitter Breakdown (Max): 230 V, Power - Max: 150 W.
Weitere Produktangebote 2SC5200-O(S1,F
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| 2SC5200-O(S1,F | Hersteller : Toshiba |
 Trans GP BJT NPN 230V 15A 150000mW 3-Pin(3+Tab) TO-3PL Magazine |
Produkt ist nicht verfügbar |
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| 2SC5200-O(S1,F | Hersteller : Toshiba |
Trans GP BJT NPN 230V 15A 150000mW 3-Pin(3+Tab) TO-3PL Magazine |
Produkt ist nicht verfügbar |
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2SC5200-O(S1,F | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS NPN 230V 15A TO-3P Packaging: Tube Package / Case: TO-3PL Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-3P(L) Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 230 V Power - Max: 150 W |
Produkt ist nicht verfügbar |