2SC5200-O(S1,F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 230V 15A TO-3P
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(L)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 150 W
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.35 EUR |
| 25+ | 4.76 EUR |
| 100+ | 3.9 EUR |
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Technische Details 2SC5200-O(S1,F Toshiba Semiconductor and Storage
Description: TRANS NPN 230V 15A TO-3P, Packaging: Tube, Package / Case: TO-3PL, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A, Current - Collector Cutoff (Max): 5µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V, Frequency - Transition: 30MHz, Supplier Device Package: TO-3P(L), Part Status: Active, Current - Collector (Ic) (Max): 15 A, Voltage - Collector Emitter Breakdown (Max): 230 V, Power - Max: 150 W.
Weitere Produktangebote 2SC5200-O(S1,F nach Preis ab 5.01 EUR bis 8.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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2SC5200-O(S1,F | Toshiba |
Bipolar Transistors - BJT X35 Pb-F POWER TRANSISTOR TO-3PL PC=150W F=100KHZ |
auf Bestellung 90 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2SC5200-O(S1,F |
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Hersteller: Toshiba
Bipolar Transistors - BJT X35 Pb-F POWER TRANSISTOR TO-3PL PC=150W F=100KHZ
Bipolar Transistors - BJT X35 Pb-F POWER TRANSISTOR TO-3PL PC=150W F=100KHZ
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.4 EUR |
| 10+ | 5.01 EUR |