2SC5200N(S1,E,S)
Produktcode: 176754
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Transistoren > Bipolar-Transistoren NPN
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Weitere Produktangebote 2SC5200N(S1,E,S) nach Preis ab 2.5 EUR bis 6.95 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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2SC5200N(S1,E,S) | Toshiba Semiconductor and Storage |
Description: TRANS NPN 230V 15A TO-3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-3P(N) Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 230 V Power - Max: 150 W |
auf Bestellung 5317 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC5200N(S1,E,S) | Toshiba |
Bipolar Transistors - BJT POWER TRANSISTOR PC=150W; F=30MHZ |
auf Bestellung 806 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC5200N(S1,E,S) | Toshiba |
Trans GP BJT NPN 230V 15A 150000mW 3-Pin(3+Tab) TO-3PN Magazine |
auf Bestellung 140 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2SC5200N(S1,E,S) |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 230V 15A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(N)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 150 W
Description: TRANS NPN 230V 15A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(N)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 150 W
auf Bestellung 5317 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.66 EUR |
| 25+ | 3.72 EUR |
| 100+ | 3.02 EUR |
| 500+ | 2.5 EUR |
| 2SC5200N(S1,E,S) |
|
Hersteller: Toshiba
Bipolar Transistors - BJT POWER TRANSISTOR PC=150W; F=30MHZ
Bipolar Transistors - BJT POWER TRANSISTOR PC=150W; F=30MHZ
auf Bestellung 806 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.68 EUR |
| 10+ | 3.75 EUR |
| 100+ | 3.01 EUR |
| 500+ | 2.53 EUR |
| 2SC5200N(S1,E,S) |
|
Hersteller: Toshiba
Trans GP BJT NPN 230V 15A 150000mW 3-Pin(3+Tab) TO-3PN Magazine
Trans GP BJT NPN 230V 15A 150000mW 3-Pin(3+Tab) TO-3PN Magazine
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 6.95 EUR |