2SC5347AE-TD-E onsemi
Hersteller: onsemiDescription: RF TRANS NPN 12V 4.7GHZ PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 8dB
Power - Max: 1.3W
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
Frequency - Transition: 4.7GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Supplier Device Package: PCP
auf Bestellung 291 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.51 EUR |
| 19+ | 0.95 EUR |
| 100+ | 0.62 EUR |
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Technische Details 2SC5347AE-TD-E onsemi
Description: RF TRANS NPN 12V 4.7GHZ PCP, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 8dB, Power - Max: 1.3W, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V, Frequency - Transition: 4.7GHz, Noise Figure (dB Typ @ f): 1.8dB @ 1GHz, Supplier Device Package: PCP.
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Description: RF TRANS NPN 12V 4.7GHZ PCP Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 8dB Power - Max: 1.3W Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V Frequency - Transition: 4.7GHz Noise Figure (dB Typ @ f): 1.8dB @ 1GHz Supplier Device Package: PCP |
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