2SC5347AE-TD-E onsemi
Hersteller: onsemi
Description: RF TRANS NPN 12V 4.7GHZ PCP
Supplier Device Package: PCP
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Frequency - Transition: 4.7GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 150mA
Power - Max: 1.3W
Gain: 8dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 12+ | 1.51 EUR |
| 19+ | 0.95 EUR |
| 100+ | 0.62 EUR |
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Technische Details 2SC5347AE-TD-E onsemi
Description: RF TRANS NPN 12V 4.7GHZ PCP, Supplier Device Package: PCP, Noise Figure (dB Typ @ f): 1.8dB @ 1GHz, Frequency - Transition: 4.7GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V, Voltage - Collector Emitter Breakdown (Max): 12V, Current - Collector (Ic) (Max): 150mA, Power - Max: 1.3W, Gain: 8dB, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote 2SC5347AE-TD-E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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2SC5347AE-TD-E | onsemi |
Description: RF TRANS NPN 12V 4.7GHZ PCP Supplier Device Package: PCP Noise Figure (dB Typ @ f): 1.8dB @ 1GHz Frequency - Transition: 4.7GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V Voltage - Collector Emitter Breakdown (Max): 12V Current - Collector (Ic) (Max): 150mA Power - Max: 1.3W Gain: 8dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
2SC5347AE-TD-E | onsemi |
RF Bipolar Transistors HIGH-FREQUENCY AMPLIFIER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2SC5347AE-TD-E |
|
Hersteller: onsemi
Description: RF TRANS NPN 12V 4.7GHZ PCP
Supplier Device Package: PCP
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Frequency - Transition: 4.7GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 150mA
Power - Max: 1.3W
Gain: 8dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Description: RF TRANS NPN 12V 4.7GHZ PCP
Supplier Device Package: PCP
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Frequency - Transition: 4.7GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 150mA
Power - Max: 1.3W
Gain: 8dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SC5347AE-TD-E |
|
Hersteller: onsemi
RF Bipolar Transistors HIGH-FREQUENCY AMPLIFIER
RF Bipolar Transistors HIGH-FREQUENCY AMPLIFIER
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH