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2SC5359-O(Q)

2SC5359-O(Q) Toshiba

5582sc5359_datasheet_en_20131101.pdf.pdf
Hersteller: Toshiba
Trans GP BJT NPN 230V 15A 180000mW 3-Pin(3+Tab) TO-3PL Tray
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Technische Details 2SC5359-O(Q) Toshiba

Description: TRANS NPN 230V 15A TO-3P, Power - Max: 180 W, Voltage - Collector Emitter Breakdown (Max): 230 V, Current - Collector (Ic) (Max): 15 A, Part Status: Active, Supplier Device Package: TO-3P(L), Frequency - Transition: 30MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V, Current - Collector Cutoff (Max): 5µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-3PL, Packaging: Bulk.

Weitere Produktangebote 2SC5359-O(Q)

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
2SC5359-O(Q) 2SC5359-O(Q) Toshiba Semiconductor and Storage docget.jsp?did=20698&prodName=2SC5359 Description: TRANS NPN 230V 15A TO-3P
Power - Max: 180 W
Voltage - Collector Emitter Breakdown (Max): 230 V
Current - Collector (Ic) (Max): 15 A
Part Status: Active
Supplier Device Package: TO-3P(L)
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Current - Collector Cutoff (Max): 5µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-3PL
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC5359-O(Q) 2SC5359-O(Q) Toshiba BD2FF96660E946AE645A4D137E77843E0A54CA94AB0F2EF3DDD5035773494AE5.pdf Bipolar Transistors - BJT Transistor NPN 230V 15A
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Im Einkaufswagen  Stück im Wert von  UAH
2SC5359-O(Q) docget.jsp?did=20698&prodName=2SC5359
2SC5359-O(Q)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 230V 15A TO-3P
Power - Max: 180 W
Voltage - Collector Emitter Breakdown (Max): 230 V
Current - Collector (Ic) (Max): 15 A
Part Status: Active
Supplier Device Package: TO-3P(L)
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Current - Collector Cutoff (Max): 5µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-3PL
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC5359-O(Q) BD2FF96660E946AE645A4D137E77843E0A54CA94AB0F2EF3DDD5035773494AE5.pdf
2SC5359-O(Q)
Hersteller: Toshiba
Bipolar Transistors - BJT Transistor NPN 230V 15A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH