2SC5439(F) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 450V 8A TO220NIS
Supplier Device Package: TO-220NIS
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 1A, 5V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 640mA, 3.2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 450 V
Current - Collector (Ic) (Max): 8 A
Part Status: Obsolete
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Technische Details 2SC5439(F) Toshiba Semiconductor and Storage
Description: TRANS NPN 450V 8A TO220NIS, Supplier Device Package: TO-220NIS, DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 1A, 5V, Current - Collector Cutoff (Max): 100µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1V @ 640mA, 3.2A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Power - Max: 2 W, Voltage - Collector Emitter Breakdown (Max): 450 V, Current - Collector (Ic) (Max): 8 A, Part Status: Obsolete.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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2SC5439(F) | Hersteller : Toshiba |
Bipolar Transistors - BJT NPN 450V 8A Transistor |
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