2SC5658RM3T5G onsemi
Hersteller: onsemi
Description: TRANS NPN 50V 0.1A SOT-723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
| Anzahl | Privatkunde |
|---|---|
| 8000+ | 0.09 EUR |
| 16000+ | 0.082 EUR |
| 24000+ | 0.077 EUR |
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Technische Details 2SC5658RM3T5G onsemi
Description: TRANS NPN 50V 0.1A SOT-723, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 1mA, 6V, Frequency - Transition: 180MHz, Supplier Device Package: SOT-723, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 260 mW.
Weitere Produktangebote 2SC5658RM3T5G nach Preis ab 0.092 EUR bis 0.52 EUR
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2SC5658RM3T5G | onsemi |
Bipolar Transistors - BJT SS GENERAL PURPOSE NPN |
auf Bestellung 9905 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC5658RM3T5G | onsemi |
Description: TRANS NPN 50V 0.1A SOT-723Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 1mA, 6V Frequency - Transition: 180MHz Supplier Device Package: SOT-723 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW |
auf Bestellung 37540 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 2SC5658RM3T5G |
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Hersteller: onsemi
Bipolar Transistors - BJT SS GENERAL PURPOSE NPN
Bipolar Transistors - BJT SS GENERAL PURPOSE NPN
auf Bestellung 9905 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 0.52 EUR |
| 11+ | 0.31 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.11 EUR |
| 2500+ | 0.11 EUR |
| 5000+ | 0.092 EUR |
| 2SC5658RM3T5G |
![]() |
Hersteller: onsemi
Description: TRANS NPN 50V 0.1A SOT-723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Description: TRANS NPN 50V 0.1A SOT-723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
auf Bestellung 37540 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 40+ | 0.52 EUR |
| 68+ | 0.31 EUR |
| 109+ | 0.19 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
| 2000+ | 0.11 EUR |

