Technische Details 2SC5738(TE85L,F) TOSHIBA
Description: NPN BIPOLAR TRANSISTOR, 20 V, 3., Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 150mV @ 32mA, 1.6A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V, Supplier Device Package: TSM, Current - Collector (Ic) (Max): 3.5 A, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 625 mW.
Weitere Produktangebote 2SC5738(TE85L,F)
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| 2SC5738(TE85L,F) | Toshiba Semiconductor and Storage |
 Description: NPN BIPOLAR TRANSISTOR, 20 V, 3.Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 32mA, 1.6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V Supplier Device Package: TSM Current - Collector (Ic) (Max): 3.5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 2SC5738(TE85L,F) | Toshiba |
Bipolar Transistors - BJT NPN Bipolar Transistor, 20 V, 3.5 A, TSM |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2SC5738(TE85L,F) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: NPN BIPOLAR TRANSISTOR, 20 V, 3.
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 32mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V
Supplier Device Package: TSM
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
Description: NPN BIPOLAR TRANSISTOR, 20 V, 3.
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 32mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V
Supplier Device Package: TSM
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2SC5738(TE85L,F) |
|
Hersteller: Toshiba
Bipolar Transistors - BJT NPN Bipolar Transistor, 20 V, 3.5 A, TSM
Bipolar Transistors - BJT NPN Bipolar Transistor, 20 V, 3.5 A, TSM
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH