Produkte > ONSEMI > 2SC5831

2SC5831 onsemi

SNYOS07582-1.pdf?t.download=true&u=5oefqw

Hersteller: onsemi
Description: POWER BIPOLAR TRANSISTOR NPN
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 55 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-126ML
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk

auf Bestellung 1432 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
1432+	0.41 EUR

Mindestbestellmenge: 1432

Im Einkaufswagen Stück im Wert von UAH

Produktrezensionen

Produktbewertung abgeben

Technische Details 2SC5831 onsemi

Description: POWER BIPOLAR TRANSISTOR NPN, Power - Max: 1.5 W, Voltage - Collector Emitter Breakdown (Max): 55 V, Current - Collector (Ic) (Max): 2 A, Supplier Device Package: TO-126ML, Frequency - Transition: 180MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 5V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: NPN - Darlington, Mounting Type: Through Hole, Package / Case: TO-225AA, TO-126-3, Packaging: Bulk.