Technische Details 2SC5886A(T6L1,NQ) Toshiba
Description: TRANS NPN 50V 5A PW-MOLD, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 220mV @ 32mA, 1.6A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V, Supplier Device Package: PW-MOLD, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1 W.
Weitere Produktangebote 2SC5886A(T6L1,NQ)
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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2SC5886A(T6L1,NQ) | Hersteller : Toshiba |
 Trans GP BJT NPN 50V 5A 1000mW 3-Pin(2+Tab) New PW-Mold T/R |
Produkt ist nicht verfügbar |
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2SC5886A(T6L1,NQ) | Hersteller : Toshiba |
Trans GP BJT NPN 50V 5A 1000mW 3-Pin(2+Tab) New PW-Mold T/R |
Produkt ist nicht verfügbar |
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| 2SC5886A(T6L1,NQ) | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 5A PW-MOLD Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 220mV @ 32mA, 1.6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V Supplier Device Package: PW-MOLD Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
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| 2SC5886A(T6L1,NQ) | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 5A PW-MOLD Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 220mV @ 32mA, 1.6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V Supplier Device Package: PW-MOLD Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
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2SC5886A(T6L1,NQ) | Hersteller : Toshiba |
Bipolar Transistors - BJT NPN VCE 0.22V 95ns 400 to 1000 hFE 5A |
Produkt ist nicht verfügbar |