2SC5916TLQ

2SC5916TLQ Rohm Semiconductor


2SC5916.pdf Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: TSMT3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
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Technische Details 2SC5916TLQ Rohm Semiconductor

Description: TRANS NPN 30V 2A TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V, Frequency - Transition: 250MHz, Supplier Device Package: TSMT3, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 500 mW.

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2SC5916TLQ 2SC5916TLQ Hersteller : Rohm Semiconductor 2SC5916.pdf Description: TRANS NPN 30V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: TSMT3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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2SC5916TLQ Hersteller : ROHM Semiconductor 2SC5916.pdf Bipolar Transistors - BJT NPN 30V 2A
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2SC5916TLQ Hersteller : Infineon Technologies 2SC5916.pdf Bipolar Transistors - BJT
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