2SC6026MFV-Y,L3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 60MHz
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
| Anzahl | Privatkunde |
|---|---|
| 8000+ | 0.049 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
8000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details 2SC6026MFV-Y,L3F Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Frequency - Transition: 60MHz, Supplier Device Package: VESM, Current - Collector (Ic) (Max): 150 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW.
Weitere Produktangebote 2SC6026MFV-Y,L3F nach Preis ab 0.038 EUR bis 0.33 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2SC6026MFV-Y,L3F | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A VESM Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 60MHz Supplier Device Package: VESM Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
auf Bestellung 21468 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
2SC6026MFV-Y,L3F | Toshiba |
Bipolar Transistors - BJT TRANSISTOR50V |
auf Bestellung 24000 Stücke: Lieferzeit 94-98 Tag (e) |
|
| 2SC6026MFV-Y,L3F |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 60MHz
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS NPN 50V 0.15A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 60MHz
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 21468 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 67+ | 0.31 EUR |
| 114+ | 0.18 EUR |
| 185+ | 0.11 EUR |
| 500+ | 0.082 EUR |
| 1000+ | 0.073 EUR |
| 2000+ | 0.064 EUR |
| 2SC6026MFV-Y,L3F |
|
Hersteller: Toshiba
Bipolar Transistors - BJT TRANSISTOR50V
Bipolar Transistors - BJT TRANSISTOR50V
auf Bestellung 24000 Stücke:
Lieferzeit 94-98 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 0.33 EUR |
| 15+ | 0.23 EUR |
| 100+ | 0.14 EUR |
| 1000+ | 0.065 EUR |
| 2500+ | 0.057 EUR |
| 8000+ | 0.042 EUR |
| 48000+ | 0.038 EUR |