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2SC6026MFV-Y,L3F

2SC6026MFV-Y,L3F Toshiba Semiconductor and Storage

docget.jsp?did=6106&prodName=2SC6026MFV
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A VESM
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: VESM
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8000+0.049 EUR
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details 2SC6026MFV-Y,L3F Toshiba Semiconductor and Storage

Description: TRANS NPN 50V 0.15A VESM, Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR), Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 150 mA, Supplier Device Package: VESM, Frequency - Transition: 60MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Operating Temperature: 150°C (TJ).

Weitere Produktangebote 2SC6026MFV-Y,L3F nach Preis ab 0.038 EUR bis 0.33 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
2SC6026MFV-Y,L3F 2SC6026MFV-Y,L3F Toshiba Semiconductor and Storage docget.jsp?did=6106&prodName=2SC6026MFV Description: TRANS NPN 50V 0.15A VESM
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: VESM
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 21468 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.31 EUR
114+0.18 EUR
185+0.11 EUR
500+0.082 EUR
1000+0.073 EUR
2000+0.064 EUR
Mindestbestellmenge: 67 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SC6026MFV-Y,L3F 2SC6026MFV-Y,L3F Toshiba 2SC6026MFV_datasheet_en_20140301-1916509.pdf Bipolar Transistors - BJT TRANSISTOR50V
auf Bestellung 24000 Stücke:
Lieferzeit 94-98 Tag (e)
11+0.33 EUR
15+0.23 EUR
100+0.14 EUR
1000+0.065 EUR
2500+0.057 EUR
8000+0.042 EUR
48000+0.038 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SC6026MFV-Y,L3F docget.jsp?did=6106&prodName=2SC6026MFV
2SC6026MFV-Y,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A VESM
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: VESM
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 21468 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
114+0.18 EUR
185+0.11 EUR
500+0.082 EUR
1000+0.073 EUR
2000+0.064 EUR
Mindestbestellmenge: 67 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SC6026MFV-Y,L3F 2SC6026MFV_datasheet_en_20140301-1916509.pdf
2SC6026MFV-Y,L3F
Hersteller: Toshiba
Bipolar Transistors - BJT TRANSISTOR50V
auf Bestellung 24000 Stücke:
Lieferzeit 94-98 Tag (e)
AnzahlPrivatkunde
11+0.33 EUR
15+0.23 EUR
100+0.14 EUR
1000+0.065 EUR
2500+0.057 EUR
8000+0.042 EUR
48000+0.038 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH