2SC6076(TE16L1,NV) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 80V 3A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
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Technische Details 2SC6076(TE16L1,NV) Toshiba Semiconductor and Storage
Description: TRANS NPN 80V 3A PW-MOLD, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V, Frequency - Transition: 150MHz, Supplier Device Package: PW-MOLD, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 10 W.
Weitere Produktangebote 2SC6076(TE16L1,NV) nach Preis ab 0.3 EUR bis 1.7 EUR
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2SC6076(TE16L1,NV) | Toshiba |
Bipolar Transistors - BJT Pwr Transtr Hi-Speed New PW-Mold |
auf Bestellung 15707 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC6076(TE16L1,NV) | Toshiba Semiconductor and Storage |
Description: TRANS NPN 80V 3A PW-MOLD Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V Frequency - Transition: 150MHz Supplier Device Package: PW-MOLD Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 10 W |
auf Bestellung 2259 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 2SC6076(TE16L1,NV) |
|
Hersteller: Toshiba
Bipolar Transistors - BJT Pwr Transtr Hi-Speed New PW-Mold
Bipolar Transistors - BJT Pwr Transtr Hi-Speed New PW-Mold
auf Bestellung 15707 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 1.05 EUR |
| 10+ | 0.89 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.4 EUR |
| 2000+ | 0.37 EUR |
| 24000+ | 0.3 EUR |
| 2SC6076(TE16L1,NV) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 80V 3A PW-MOLD
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
Description: TRANS NPN 80V 3A PW-MOLD
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
auf Bestellung 2259 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.7 EUR |
| 20+ | 1.06 EUR |
| 100+ | 0.69 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.48 EUR |