Produkte > ROHM SEMICONDUCTOR > 2SCR372PFRAT100R
2SCR372PFRAT100R

2SCR372PFRAT100R ROHM Semiconductor


scr372pfra-e-1510368.pdf
Hersteller: ROHM Semiconductor
Bipolar Transistors - BJT NPN 120V 0.7A 1E+21W SOT-89
auf Bestellung 2000 Stücke:

Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details 2SCR372PFRAT100R ROHM Semiconductor

Description: TRANS NPN 120V 0.7A MPT3, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 120 V, Current - Collector (Ic) (Max): 700 mA, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR), Part Status: Not For New Designs, Supplier Device Package: MPT3, Frequency - Transition: 220MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V.

Weitere Produktangebote 2SCR372PFRAT100R

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
2SCR372PFRAT100R 2SCR372PFRAT100R Rohm Semiconductor Description: TRANS NPN 120V 0.7A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 700 mA
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Supplier Device Package: MPT3
Frequency - Transition: 220MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SCR372PFRAT100R 2SCR372PFRAT100R Rohm Semiconductor Description: TRANS NPN 120V 0.7A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SCR372PFRAT100R
2SCR372PFRAT100R
Hersteller: Rohm Semiconductor
Description: TRANS NPN 120V 0.7A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 700 mA
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Supplier Device Package: MPT3
Frequency - Transition: 220MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SCR372PFRAT100R
2SCR372PFRAT100R
Hersteller: Rohm Semiconductor
Description: TRANS NPN 120V 0.7A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH