2SCR514P5T100 Rohm Semiconductor
auf Bestellung 1099 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 616+ | 0.24 EUR |
| 673+ | 0.21 EUR |
| 785+ | 0.18 EUR |
| 1000+ | 0.16 EUR |
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Technische Details 2SCR514P5T100 Rohm Semiconductor
Description: TRANS NPN 80V 0.7A MPT3, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 300mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V, Frequency - Transition: 320MHz, Supplier Device Package: MPT3, Part Status: Active, Current - Collector (Ic) (Max): 700 mA, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 500 mW.
Weitere Produktangebote 2SCR514P5T100 nach Preis ab 0.18 EUR bis 0.80 EUR
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2SCR514P5T100 | Hersteller : Rohm Semiconductor |
 Description: TRANS NPN 80V 0.7A MPT3Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 300mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 320MHz Supplier Device Package: MPT3 Part Status: Active Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 500 mW |
auf Bestellung 1380 Stücke: Lieferzeit 10-14 Tag (e) |
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2SCR514P5T100 | Hersteller : ROHM Semiconductor |
Bipolar Transistors - BJT NPN 80V Vceo 700mA Ic MPT3 |
auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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2SCR514P5T100 | Hersteller : Rohm Semiconductor |
Trans GP BJT NPN 80V 0.7A 2000mW 4-Pin(3+Tab) MPT T/R |
auf Bestellung 7509 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2SCR514P5T100 | Hersteller : ROHM SEMICONDUCTOR |
2SCR514P5T100 NPN SMD transistors |
Produkt ist nicht verfügbar |
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2SCR514P5T100 | Hersteller : Rohm Semiconductor |
Description: TRANS NPN 80V 0.7A MPT3 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 300mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 320MHz Supplier Device Package: MPT3 Part Status: Active Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |