2SCR514P5T100 Rohm Semiconductor
| Anzahl | Preis |
|---|---|
| 504+ | 0.29 EUR |
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Technische Details 2SCR514P5T100 Rohm Semiconductor
Description: TRANS NPN 80V 0.7A MPT3, Package / Case: TO-243AA, Packaging: Tape & Reel (TR), Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 700 mA, Part Status: Active, Supplier Device Package: MPT3, Frequency - Transition: 320MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 300mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount.
Weitere Produktangebote 2SCR514P5T100 nach Preis ab 0.2 EUR bis 1 EUR
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2SCR514P5T100 | Hersteller : Rohm Semiconductor |
 Trans GP BJT NPN 80V 0.7A 2000mW 4-Pin(3+Tab) MPT T/R |
auf Bestellung 1092 Stücke: Lieferzeit 14-21 Tag (e) |
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2SCR514P5T100 | Hersteller : Rohm Semiconductor |
Trans GP BJT NPN 80V 0.7A 2000mW 4-Pin(3+Tab) MPT T/R |
auf Bestellung 590 Stücke: Lieferzeit 14-21 Tag (e) |
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2SCR514P5T100 | Hersteller : Rohm Semiconductor |
Description: TRANS NPN 80V 0.7A MPT3 Current - Collector (Ic) (Max): 700 mA Part Status: Active Supplier Device Package: MPT3 Frequency - Transition: 320MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 300mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 80 V |
auf Bestellung 1380 Stücke: Lieferzeit 10-14 Tag (e) |
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2SCR514P5T100 | Hersteller : ROHM Semiconductor |
Bipolar Transistors - BJT NPN 80V Vceo 700mA Ic MPT3 |
auf Bestellung 751 Stücke: Lieferzeit 10-14 Tag (e) |
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