2SCR522EBTL Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 3497+ | 0.05 EUR |
| 3522+ | 0.049 EUR |
| 4099+ | 0.042 EUR |
| 6000+ | 0.038 EUR |
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Produktbewertung abgeben
Technische Details 2SCR522EBTL Rohm Semiconductor
Description: TRANS NPN 20V 0.2A EMT3F, Packaging: Tape & Reel (TR), Package / Case: SC-89, SOT-490, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V, Frequency - Transition: 400MHz, Supplier Device Package: EMT3F (SOT-416FL), Part Status: Active, Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 150 mW.
Weitere Produktangebote 2SCR522EBTL nach Preis ab 0.044 EUR bis 0.33 EUR
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2SCR522EBTL | Rohm Semiconductor |
 Trans GP BJT NPN 20V 0.2A 3-Pin EMTF T/R |
auf Bestellung 2821 Stücke: Lieferzeit 14-21 Tag (e) |
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2SCR522EBTL | ROHM Semiconductor |
Bipolar Transistors - BJT NPN, SOT-416FL, 20V 200mA, General Purpose Amplification Transistor |
auf Bestellung 6919 Stücke: Lieferzeit 10-14 Tag (e) |
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2SCR522EBTL | Rohm Semiconductor |
Description: TRANS NPN 20V 0.2A EMT3F Packaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V Frequency - Transition: 400MHz Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 150 mW |
auf Bestellung 2557 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2SCR522EBTL |
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Hersteller: Rohm Semiconductor
Trans GP BJT NPN 20V 0.2A 3-Pin EMTF T/R
Trans GP BJT NPN 20V 0.2A 3-Pin EMTF T/R
auf Bestellung 2821 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1456+ | 0.12 EUR |
| 2500+ | 0.12 EUR |
| 2SCR522EBTL |
|
Hersteller: ROHM Semiconductor
Bipolar Transistors - BJT NPN, SOT-416FL, 20V 200mA, General Purpose Amplification Transistor
Bipolar Transistors - BJT NPN, SOT-416FL, 20V 200mA, General Purpose Amplification Transistor
auf Bestellung 6919 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 0.31 EUR |
| 19+ | 0.18 EUR |
| 100+ | 0.11 EUR |
| 500+ | 0.083 EUR |
| 1000+ | 0.071 EUR |
| 3000+ | 0.058 EUR |
| 9000+ | 0.044 EUR |
| 2SCR522EBTL |
|
Hersteller: Rohm Semiconductor
Description: TRANS NPN 20V 0.2A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 150 mW
Description: TRANS NPN 20V 0.2A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 150 mW
auf Bestellung 2557 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 63+ | 0.33 EUR |
| 103+ | 0.2 EUR |
| 167+ | 0.13 EUR |
| 500+ | 0.092 EUR |
| 1000+ | 0.08 EUR |