2SCR522EBTL Rohm Semiconductor
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3497+ | 0.041 EUR |
| 3522+ | 0.04 EUR |
| 4099+ | 0.033 EUR |
| 6000+ | 0.03 EUR |
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Technische Details 2SCR522EBTL Rohm Semiconductor
Description: TRANS NPN 20V 0.2A EMT3F, Packaging: Tape & Reel (TR), Package / Case: SC-89, SOT-490, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V, Frequency - Transition: 400MHz, Supplier Device Package: EMT3F (SOT-416FL), Part Status: Active, Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 150 mW.
Weitere Produktangebote 2SCR522EBTL nach Preis ab 0.033 EUR bis 0.28 EUR
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2SCR522EBTL | Hersteller : Rohm Semiconductor |
 Trans GP BJT NPN 20V 0.2A 3-Pin EMTF T/R |
auf Bestellung 2821 Stücke: Lieferzeit 14-21 Tag (e) |
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2SCR522EBTL | Hersteller : ROHM Semiconductor |
Bipolar Transistors - BJT NPN General Purpose Amplification Transistor |
auf Bestellung 2415 Stücke: Lieferzeit 10-14 Tag (e) |
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2SCR522EBTL | Hersteller : Rohm Semiconductor |
Description: TRANS NPN 20V 0.2A EMT3F Packaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V Frequency - Transition: 400MHz Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 150 mW |
auf Bestellung 2557 Stücke: Lieferzeit 10-14 Tag (e) |
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2SCR522EBTL | Hersteller : Rohm Semiconductor |
Description: TRANS NPN 20V 0.2A EMT3F Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V Frequency - Transition: 400MHz Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 150 mW |
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