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2SCR542F3TR

2SCR542F3TR ROHM Semiconductor

datasheet?p=2SCR542F3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: ROHM Semiconductor
Bipolar Transistors - BJT NPN 3A Ic 30V Vceo HUML2020L3
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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2+1.87 EUR
10+1.15 EUR
100+0.75 EUR
500+0.59 EUR
1000+0.52 EUR
3000+0.46 EUR
6000+0.39 EUR
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Technische Details 2SCR542F3TR ROHM Semiconductor

Description: TRANS NPN 30V 3A HUML2020L3, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 3 A, Part Status: Active, Supplier Device Package: HUML2020L3, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: 3-UDFN Exposed Pad, Packaging: Tape & Reel (TR).

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2SCR542F3TR 2SCR542F3TR Rohm Semiconductor datasheet?p=2SCR542F3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 3A HUML2020L3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: HUML2020L3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SCR542F3TR 2SCR542F3TR Rohm Semiconductor datasheet?p=2SCR542F3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 3A HUML2020L3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: HUML2020L3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SCR542F3TR datasheet?p=2SCR542F3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR542F3TR
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 3A HUML2020L3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: HUML2020L3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SCR542F3TR datasheet?p=2SCR542F3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR542F3TR
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 3A HUML2020L3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: HUML2020L3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH