2SD1060R-1EX onsemi
Hersteller: onsemi
Description: TRANS NPN 50V 5A TO220-3
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-220-3
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Technische Details 2SD1060R-1EX onsemi
Description: TRANS NPN 50V 5A TO220-3, Power - Max: 1.75 W, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 5 A, Supplier Device Package: TO-220-3, Frequency - Transition: 30MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V, Current - Collector Cutoff (Max): 100µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote 2SD1060R-1EX
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| 2SD1060R-1EX | ON Semiconductor |
Bipolar Transistors - BJT BIP NPN 5A 50V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2SD1060R-1EX |
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Hersteller: ON Semiconductor
Bipolar Transistors - BJT BIP NPN 5A 50V
Bipolar Transistors - BJT BIP NPN 5A 50V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH