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2SD1060S-1E

2SD1060S-1E onsemi


2SD1060_D-3538092.pdf
Hersteller: onsemi
Bipolar Transistors - BJT BIP NPN 5A 50V
auf Bestellung 538 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.2 EUR
10+1.56 EUR
100+1.39 EUR
600+1.11 EUR
1200+0.94 EUR
5400+0.9 EUR
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Technische Details 2SD1060S-1E onsemi

Description: TRANS NPN 50V 5A TO-220-3, Power - Max: 1.75 W, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 5 A, Part Status: Active, Supplier Device Package: TO-220-3, Frequency - Transition: 30MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 1A, 2V, Current - Collector Cutoff (Max): 100µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.

Weitere Produktangebote 2SD1060S-1E nach Preis ab 1.01 EUR bis 3.45 EUR

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2SD1060S-1E 2SD1060S-1E Hersteller : onsemi en686-d.pdf Description: TRANS NPN 50V 5A TO-220-3
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 5 A
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 1A, 2V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 4892 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.45 EUR
50+1.67 EUR
100+1.49 EUR
500+1.19 EUR
1000+1.09 EUR
2000+1.01 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH