2SD1060S-1E ON Semiconductor
auf Bestellung 4700 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 154+ | 0.96 EUR |
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Technische Details 2SD1060S-1E ON Semiconductor
Description: TRANS NPN 50V 5A TO-220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 1A, 2V, Frequency - Transition: 30MHz, Supplier Device Package: TO-220-3, Part Status: Active, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1.75 W.
Weitere Produktangebote 2SD1060S-1E nach Preis ab 0.99 EUR bis 3.45 EUR
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2SD1060S-1E | Hersteller : onsemi |
 Bipolar Transistors - BJT BIP NPN 5A 50V |
auf Bestellung 410 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD1060S-1E | Hersteller : onsemi |
Description: TRANS NPN 50V 5A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 1A, 2V Frequency - Transition: 30MHz Supplier Device Package: TO-220-3 Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.75 W |
auf Bestellung 4892 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD1060S-1E | Hersteller : ON Semiconductor |
Trans GP BJT NPN 50V 5A 17500mW 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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2SD1060S-1E | Hersteller : ON Semiconductor |
Trans GP BJT NPN 50V 5A 17500mW 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |