2SD1061R onsemi
Hersteller: onsemiDescription: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 40 W
auf Bestellung 1543 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 523+ | 0.94 EUR |
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Technische Details 2SD1061R onsemi
Description: POWER BIPOLAR TRANSISTOR NPN, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 400mA, 4A, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V, Frequency - Transition: 10MHz, Supplier Device Package: TO-220AB, Current - Collector (Ic) (Max): 7 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 40 W.
Weitere Produktangebote 2SD1061R
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| 2SD1061R | Hersteller : ONSEMI |
Description: ONSEMI - 2SD1061R - 2SD1061R, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 1543 Stücke: Lieferzeit 14-21 Tag (e) |