2SD1062R onsemi
Hersteller: onsemiDescription: POWER BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.75 W
auf Bestellung 16403 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 398+ | 1.22 EUR |
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Technische Details 2SD1062R onsemi
Description: POWER BIPOLAR TRANSISTOR, Packaging: Bulk, Part Status: Active, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 6A, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V, Frequency - Transition: 10MHz, Supplier Device Package: TO-220-3, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1.75 W.
Weitere Produktangebote 2SD1062R
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| 2SD1062R | Hersteller : ONSEMI |
Description: ONSEMI - 2SD1062R - 2SD1062 - POWER BIPOLAR TRANSISTOR tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 16403 Stücke: Lieferzeit 14-21 Tag (e) |