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2SD1153-AE

2SD1153-AE onsemi

SNYOD004-41.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: NPN DARLINGTON TRANSISTOR
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: 3-MP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Part Status: Active
Packaging: Bulk
auf Bestellung 7319 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
833+0.58 EUR
Mindestbestellmenge: 833
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Technische Details 2SD1153-AE onsemi

Description: NPN DARLINGTON TRANSISTOR, Power - Max: 900 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 1.5 A, Supplier Device Package: 3-MP, Frequency - Transition: 120MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 500mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN - Darlington, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 Long Body, Part Status: Active, Packaging: Bulk.