2SD1190 onsemi

Description: POWER BIPOLAR TRANSISTOR NPN, Power - Max: 1.75 W, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 4 A, Supplier Device Package: TO-220AB, Frequency - Transition: 20MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V, Current - Collector Cutoff (Max): 100µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4mA, 2A, Operating Temperature: 150°C (TJ), Transistor Type: NPN - Darlington, Mounting Type: Through Hole, Package / Case: TO-220-3, Part Status: Active, Packaging: Bulk.