2SD1407A-Y(F) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 100V 5A TO-220NIS
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 2V @ 400mA, 4A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 5 A
Part Status: Obsolete
Supplier Device Package: TO-220NIS
Frequency - Transition: 12MHz
Produktrezensionen
Produktbewertung abgeben
Technische Details 2SD1407A-Y(F) Toshiba Semiconductor and Storage
Description: TRANS NPN 100V 5A TO-220NIS, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V, Current - Collector Cutoff (Max): 100µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 2V @ 400mA, 4A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Power - Max: 30 W, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 5 A, Part Status: Obsolete, Supplier Device Package: TO-220NIS, Frequency - Transition: 12MHz.
Weitere Produktangebote 2SD1407A-Y(F)
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
2SD1407A-Y(F) | Hersteller : Toshiba |
Bipolar Transistors - BJT NPN 100V 5A Transistor |
Produkt ist nicht verfügbar |
|
| 2SD1407A-Y (F) | Hersteller : onsemi / Fairchild | Bipolar Transistors - BJT |
Produkt ist nicht verfügbar |