2SD1423A
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Lieferzeit 21-28 Tag (e)
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Technische Details 2SD1423A
Description: TRANS NPN 50V 0.5A NS-B1, Power - Max: 300 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: NS-B1, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 150mA, 10V, Current - Collector Cutoff (Max): 1µA, Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: 3-SIP, Packaging: Tape & Box (TB).
Weitere Produktangebote 2SD1423A
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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2SD1423A | Panasonic Electronic Components |
Description: TRANS NPN 50V 0.5A NS-B1 Power - Max: 300 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: NS-B1 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 150mA, 10V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: 3-SIP Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2SD1423A |
|
Hersteller: Panasonic Electronic Components
Description: TRANS NPN 50V 0.5A NS-B1
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: NS-B1
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 150mA, 10V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: 3-SIP
Packaging: Tape & Box (TB)
Description: TRANS NPN 50V 0.5A NS-B1
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: NS-B1
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 150mA, 10V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: 3-SIP
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH