2SD1423A
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Lieferzeit 21-28 Tag (e)
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Technische Details 2SD1423A
Description: TRANS NPN 50V 0.5A NS-B1, Packaging: Tape & Box (TB), Package / Case: 3-SIP, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 150mA, 10V, Frequency - Transition: 200MHz, Supplier Device Package: NS-B1, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 300 mW.
Weitere Produktangebote 2SD1423A
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
2SD1423A | Panasonic Electronic Components |
Description: TRANS NPN 50V 0.5A NS-B1 Packaging: Tape & Box (TB) Package / Case: 3-SIP Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: NS-B1 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2SD1423A |
|
Hersteller: Panasonic Electronic Components
Description: TRANS NPN 50V 0.5A NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: NS-B1
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Description: TRANS NPN 50V 0.5A NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: NS-B1
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH