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2SD1682T

2SD1682T onsemi

SNYOS08371-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: TO-126ML
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
auf Bestellung 22654 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1902+0.26 EUR
Mindestbestellmenge: 1902 Stücke
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Technische Details 2SD1682T onsemi

Description: POWER BIPOLAR TRANSISTOR NPN, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V, Frequency - Transition: 140MHz, Supplier Device Package: TO-126ML, Current - Collector (Ic) (Max): 2.5 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1.5 W.