2SD1695-AZ Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 35 V
Power - Max: 1.3 W
auf Bestellung 13600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 111+ | 4.42 EUR |
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Technische Details 2SD1695-AZ Renesas Electronics Corporation
Description: POWER BIPOLAR TRANSISTOR NPN, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.2V @ 1mA, 1A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V, Supplier Device Package: TO-126, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 35 V, Power - Max: 1.3 W.