2SD1801S-E onsemi
Hersteller: onsemi
Description: TRANS NPN 50V 2A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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Technische Details 2SD1801S-E onsemi
Description: TRANS NPN 50V 2A TP, Power - Max: 800 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 2 A, Part Status: Obsolete, Supplier Device Package: TP, Frequency - Transition: 150MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Bulk.
Weitere Produktangebote 2SD1801S-E nach Preis ab 0.48 EUR bis 1.21 EUR
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2SD1801S-E | onsemi |
Bipolar Transistors - BJT BIP NPN 2A 50V |
auf Bestellung 961 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2SD1801S-E |
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Hersteller: onsemi
Bipolar Transistors - BJT BIP NPN 2A 50V
Bipolar Transistors - BJT BIP NPN 2A 50V
auf Bestellung 961 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.21 EUR |
| 10+ | 1.06 EUR |
| 100+ | 0.81 EUR |
| 500+ | 0.64 EUR |
| 1000+ | 0.51 EUR |
| 2500+ | 0.49 EUR |
| 5000+ | 0.48 EUR |