2SD1802S-E onsemi
Hersteller: onsemi
Description: TRANS NPN 50V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
| Anzahl | Preis |
|---|---|
| 814+ | 0.56 EUR |
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Technische Details 2SD1802S-E onsemi
Description: TRANS NPN 50V 3A TP, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 3 A, Part Status: Obsolete, Supplier Device Package: TP, Frequency - Transition: 150MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Bulk.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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2SD1802S-E | Hersteller : ON Semiconductor |
Bipolar Transistors - BJT BIP NPN 3A 50V |
auf Bestellung 1530 Stücke: Lieferzeit 10-14 Tag (e) |