2SD1803S-E Sanyo
Hersteller: Sanyo
Description: NPN EPITAXIAL PLANAR SILICON TRA
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: IPAK/TP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: NPN EPITAXIAL PLANAR SILICON TRA
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: IPAK/TP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 2539 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
461+ | 1.07 EUR |
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Technische Details 2SD1803S-E Sanyo
Description: NPN EPITAXIAL PLANAR SILICON TRA, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V, Frequency - Transition: 180MHz, Supplier Device Package: IPAK/TP, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1 W.
Weitere Produktangebote 2SD1803S-E nach Preis ab 1.36 EUR bis 2.96 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
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2SD1803S-E | Hersteller : onsemi | Bipolar Transistors - BJT LOW-SATURATION VOLTAGE |
auf Bestellung 6830 Stücke: Lieferzeit 14-28 Tag (e) |
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2SD1803S-E | Hersteller : ON Semiconductor | Trans GP BJT NPN 50V 5A 1000mW 3-Pin(3+Tab) IPAK Bag |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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2SD1803S-E | Hersteller : ON Semiconductor | Trans GP BJT NPN 50V 5A 1000mW 3-Pin(3+Tab) IPAK Bag |
auf Bestellung 94 Stücke: Lieferzeit 14-21 Tag (e) |
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2SD1803S-E | Hersteller : ON Semiconductor | Trans GP BJT NPN 50V 5A 1000mW 3-Pin(3+Tab) IPAK Bag |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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2SD1803S-E | Hersteller : ON Semiconductor | Trans GP BJT NPN 50V 5A 1000mW 3-Pin(3+Tab) IPAK Bag |
auf Bestellung 94 Stücke: Lieferzeit 14-21 Tag (e) |
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2SD1803S-E | Hersteller : ON Semiconductor | Trans GP BJT NPN 50V 5A 1000mW 3-Pin(3+Tab) IPAK Bag |
Produkt ist nicht verfügbar |