Produkte > ONSEMI > 2SD1803S-H

2SD1803S-H onsemi

Hersteller: onsemi
Bipolar Transistors - BJT BIP NPN 5A 50V

auf Bestellung 1539 Stücke:

Lieferzeit 14-28 Tag (e)

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Technische Details 2SD1803S-H onsemi

Description: TRANS NPN 50V 5A TP, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V, Frequency - Transition: 180MHz, Supplier Device Package: TP, Part Status: Obsolete, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1 W.

Weitere Produktangebote 2SD1803S-H

Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit
2SD1803S-H	Hersteller : ONSEMI	Description: ONSEMI - 2SD1803S-H - TRANSISTOR, BIPOLAR, NPN, 50V, 5A-TO-251 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023)	auf Bestellung 161000 Stücke: Lieferzeit 14-21 Tag (e)
2SD1803S-H	Hersteller : ON Semiconductor	Trans GP BJT NPN 50V 5A 1000mW 3-Pin(3+Tab) IPAK Bag	Produkt ist nicht verfügbar
2SD1803S-H	Hersteller : onsemi	Description: TRANS NPN 50V 5A TP Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V Frequency - Transition: 180MHz Supplier Device Package: TP Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W	Produkt ist nicht verfügbar